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Extra resources for A Note on the Simple Device for Increasing a Photographic Power of Large Telescopes (1920)(en)(4s)

Example text

1~--~ f(k2,w2) (-~1 ,wt) - i (9 i ® Fig. 1. Schematic description of the transitions involved in the contribution of 'YgAto the transition susceptibility. I and 2 indicate the time order of the transitions. The dotted arrows indicate photons. 6) involving the ~,ut~AAinteraction to first order. This term applies to scattering by the elementary excitations which result in fluctuations of the electronic charge density. 16) • J" d~o exp(icot) (ilo ( - k, t) ~ ( - &, 0) l i)T, where ro = (eZ/mc 2) is the classical radius of the electron and 0 ( - k , t) =- N ( - k , t)/V is the electronic charge density fluctuation associated with the excitation.

25]. In these diagrams we show the processes of Fig. 2a and b for crystals with empty conduction bands and full valence bands. Similar diagrams can be drawn for processes involving intermediate exciton states. The time order of the three electronic transitions in Figs. 5 is always the same. The diagrams of Fig. 4 describe the two-band contributions to (6~)~,v. Similarly, the diagrams of Fig. 5 correspond to the three-band terms. This separation of the Raman process into two-band and three-band is convenient for the discussion of the resonant Raman effect in which the dominant contributions to ( ~ ) ~ correspond to the time order of the diagrams of Fig.

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